PART |
Description |
Maker |
1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9 Diode Switching 100V 240A 2-Pin DO-9 Diode Switching 1KV 300A 2-Pin DO-9 Diode Switching 1.4KV 240A 2-Pin DO-9 Diode Switching 300V 240A 2-Pin DO-9 Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
CDSV3-20-G CDSV3-21-G CDSV3-19-G12 CDSV3-19-G |
Switching Diodes Array, V-RRM=150V, V-R=150V, P-D=200mW, I-F=200mA Switching Diodes Array, V-RRM=100V, V-R=100V, P-D=200mW, I-F=200mA SMD Switching Diode
|
Comchip Technology
|
SB01-15NP SB01-15NP-E |
150V, 100mA Rectifier Shottky Barrier Diode Schottky Barrier Diode DIODE SCHOTTKY 150V 0.1A 3NP
|
Sanyo Semiconductor SANYO[Sanyo Semicon Device]
|
20CTQ150-1 20CTQ150S 20CTQ150 |
150V 20A Schottky Common Cathode Diode in a D2-Pak package 150V 20A Schottky Common Cathode Diode in a TO-220AB package 150V 20A Schottky Common Cathode Diode in a TO-262 package SCHOTTKY RECTIFIER 20 Amp
|
International Rectifier
|
1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin Diode Switching 50V 3A 2-Pin Case A GOLD BOUNDED GERMANUM DIODE Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R Diode Switching 125V 0.0003A 2-Pin DO-35 Diode Switching 50V 0.005A 2-Pin Case H GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
SB002-15SPA-E SB002-15SPA |
0.02 A, 150 V, SILICON, SIGNAL DIODE DIODE SCHOTTKY 150V 0.02A 3SPA
|
Sanyo Semiconductor
|
IRF5Y3315CM |
150V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 150V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.085ohm, Id=18A*)
|
IRF[International Rectifier]
|
CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode SMD Switching Diode Dual: In Series SMD Switching Diode Single: High Voltage SMD Switching Diode Dual: Common Cathode SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
CDST-19-G CDST-20-G |
Switching Diodes Array, V-RRM=100V, V-R=100V, P-D=250mW, I-F=200mA Switching Diodes Array, V-RRM=150V, V-R=150V, P-D=250mW, I-F=200mA
|
Comchip Technology
|
RJK1525DPP-M0 RJK1525DPP-M0T2 RJK1525DPP-M0-15 |
150V - 17A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors Mitsubishi Electric Corporation
|
JANS1N7038U3 JANTX1N7038U3 |
30A 150v Hi-Rel Schottky Discrete Diode in a SMD-0.5 package DLA Number 1N7038U3
|
International Rectifier
|